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GaAs MMIC GN01094B GaAs IC (with built-in ferroelectric) Unit : mm 0.425 1.250.1 * Super miniature S-Mini 6-pin package (2125 size) * Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in R0.2 1 0.65 2 0.65 3 0.425 2.00.1 0.2 6 - 0 to 10 Parameter Power supply voltage Circuit current Gate control voltage Reference voltage Max input power Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDD IDD VAGC VREF PIN PD Topr Tstg Ratings 8 80 0 to 3 5 -5 150 -30 to +90 -40 to +120 Unit V mA V V dBm mW C C EIAJ : SC-88 0 to 0.1 1 : VDD2 4 : RFIN 2 : VREF 5 : GND 3 : VDD1 6 : VAGC S Mini Type Package (6-pin) Marking Symbol : KV s Electrical Characteristics VDD1=VDD2=VREF=3.0 V, f=906 MHz, Ta=25 C3 C Parameter Circuit current *1 Symbol IDD PG1 PG2 DR ACP Conditions VAGC=2.0 V, PIN=-20 dBm VAGC=2.0 V, PIN=-20 dBm VAGC=0.5 V, PIN=-20 dBm PG1-PG2 PIN=-15 dBm, POUT=5 dBm 900 kHz Detuning, 30 kHz Bandwidth min typ 32 0.70.1 0.90.1 s Absolute Maximum Ratings Ta=25 C max 40 -8 -49 Unit mA dB dB dB dBc Power gain 1 *1 Power gain 2 *1 27 31 -14 Dynamic range Adjacent channel leakage power (ACP) *1, 2 Note) *1 : Refer to measurement circuit. *2 : Design-guaranteed items. 35 45 -54 0.20.1 s Features 2.10.1 0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 0.20.05 0.12 +0.05 -0.02 4 6 5 1 GN01094B s Measurement Circuit 1000 pF GaAs MMIC 18 nH 100 pF 15 RFIN VAGC 4.7 k 1000 pF 5 6 1 15 Out 18 pF 2 3 4 33 nH 1000 pF 22 nH 120 VREF VDD2 VDD1 2 1000 pF 100 pF 100 pF 47 nF |
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