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 GaAs MMIC
GN01094B
GaAs IC (with built-in ferroelectric)
Unit : mm
0.425
1.250.1
* Super miniature S-Mini 6-pin package (2125 size) * Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in
R0.2 1 0.65 2 0.65 3
0.425
2.00.1
0.2
6 - 0 to 10
Parameter Power supply voltage Circuit current Gate control voltage Reference voltage Max input power Allowable power dissipation Operating ambient temperature Storage temperature
Symbol VDD IDD VAGC VREF PIN PD Topr Tstg
Ratings 8 80 0 to 3 5 -5 150 -30 to +90 -40 to +120
Unit V mA V V dBm mW C C
EIAJ : SC-88
0 to 0.1
1 : VDD2 4 : RFIN 2 : VREF 5 : GND 3 : VDD1 6 : VAGC S Mini Type Package (6-pin)
Marking Symbol : KV
s Electrical Characteristics VDD1=VDD2=VREF=3.0 V, f=906 MHz, Ta=25 C3 C
Parameter Circuit current
*1
Symbol IDD PG1 PG2 DR ACP
Conditions VAGC=2.0 V, PIN=-20 dBm VAGC=2.0 V, PIN=-20 dBm VAGC=0.5 V, PIN=-20 dBm PG1-PG2 PIN=-15 dBm, POUT=5 dBm 900 kHz Detuning, 30 kHz Bandwidth
min
typ 32
0.70.1 0.90.1
s Absolute Maximum Ratings Ta=25 C
max 40 -8 -49
Unit mA dB dB dB dBc
Power gain 1 *1 Power gain 2
*1
27
31 -14
Dynamic range Adjacent channel leakage power (ACP) *1, 2 Note) *1 : Refer to measurement circuit. *2 : Design-guaranteed items.
35
45 -54
0.20.1
s Features
2.10.1
0.1
For the preamplifier of the transmitting section in a cellular phone Other communication equipment
0.20.05
0.12 +0.05 -0.02 4
6
5
1
GN01094B
s Measurement Circuit
1000 pF
GaAs MMIC
18 nH 100 pF 15 RFIN
VAGC
4.7 k
1000 pF
5
6
1
15 Out
18 pF
2
3
4
33 nH
1000 pF
22 nH
120
VREF VDD2 VDD1
2
1000 pF
100 pF
100 pF
47 nF


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